Semiconductor Energy Laboratory Co., Ltd. (Atsugi-shi, Kanagawa-ken, JP)

It is a silicon-based structure that is three-dimensionally intricate in shape. In addition, it is provided a simple and straightforward method for creating the silicon structure by the help of a process in which an ordered pattern forms naturally to form a nano-structure. Plasma treatment under hydrogen is applied to an amorphous silicon surface and the following procedures are carried out simultaneously using a reaction procedure to create microcrystalline silicon a top layer of silicon as well as the process of etching the amorphous silicon layer that is exposed, resulting in it forms a nano-structure that has an upper structure that is in the microcrystalline state as well as the lower structure, in an amorphous form over the silicon layer is formed; accordingly the silicon structure that has 3D-complex shapes can be created.

1. Field of the Invention

The invention is based on the silicon structure as well as a method of manufacturing it.

2. Description of Related Art

The accuracy of microfabrication techniques has increased steadily through the years. Nano-meter-scale structures (a nanostructure) and the process of making it are attracting the interest from various fields of electronics. A technique that makes use of electron beams or light beams to generate a pattern is used for the manufacturing of the nano-structure.

In contrast, there’s a method that uses the phenomenon that an ordered pattern is naturally created into nanostructures without the need for a synthetic technique such as lithography. Nano-structures can be formed through the use of this phenomenon. It doesn’t need to be created directly, so that it is able to be created over large areas.

As an example of a nano-structure, there is hemispherical-grain-silicon (HSG-Si) (for example, Patent Document 1). HSG-Si is a hemispherical, polysilicon grain. In Patent Document 1, the HSG-Si is formed on the electrode surface of acapacitor to enhance the surface area of the electrode, and consequently, storage capacity is increased.

[Patent Document 1] Japanese Published Patent Application No. H5-315543

A technique for forming an three-dimensional nano-structure that isn’t as complex as the hemispherical polysilicon described in Patent Document 1 has been previously disclosed. However, only a handful of techniques to create a nano-structure that has an even more complex three-dimensional shape (for instance, a form with three-dimensional swelling and constriction) have been described in relation to the previous.

Particularly, when a surface area of an electrode surface of a capacitor is increased due to the formation of a projection or a depression, the nanostructure is formed to be three-dimensionally complex that are constricted and swelling.

A silicon layer with an intricate three-dimensionally constructed nano-structure is one embodiment of the invention. Another object of one embodimentof the present invention is to provide a method for fabricating the silicon structure easily and easily, utilizing the process whereby an ordered pattern is formed spontaneously to form a nano-structure.

Plasma treatment in hydrogen atmosphere is performed on an amorphous silicon layer . the following procedures are carried out at the same time: a reaction process for the growth of microcrystalline silicon a surface of the silicon layer, and a reaction process to etch the silicon layer, which is exposed, so that the nano-structure that includes an upper structure in a microcrystalline state and an lower structure in an amorphous state is formed over the silicon layer. The following structures are possible to be used for a variety of purposes, including.

One version of the invention includes an amorphous silicon layer and a variety of nano-structures that are formed on top this layer. The nano-structure consists of an upper structure that is the amorphous silicon, and an upper one that is composed of microcrystalline silicon, and which overlaps with the lower structure. The maximum width of the direction of horizontally oriented silicon structures is smaller or equal to that of its upper structure’s vertical direction within the cross-sections of the upper and lower structures.

It is suggested that the width in horizontal direction be reduced gradually from the peripheral part of the upper structure, which has the widest width in the horizontal direction to the lower structures of the cross-section of the lowerstructure. Covalent bonds are preferred between a silicon-atom in the lower structure as well as the silicon atom within the Amorphous Layer. Additionally, the top surface of the upper structure is preferablycurved. Amorphous silicon and nano-structures can be enhanced with an impurity element of one conductivity type.

A capacitor comprising the silicon structure, an insulation layer over it as well as an electrode layer above the insulation layers is yet another version of the invention. Additionally, a different embodiment of the presentinvention is a capacitor that includes the silicon structure, a second electrode layer over the silicon structure and an insulating layer on top of the first electrode layer and a second electrode layer over the insulating layer.

Another aspect of the invention is a technique for creating a silicon structure performing plasma treatment under hydrogen atmosphere on an amorphous silicon layer to create microcrystalline silicon on the surface of the amorphoussilicon layer such that a number of upper structures are formed as well as, simultaneously you etch the amorphous silicon layer which is exposed, so that a plurality of lower structures under the upper structures are created which results in a multitude of nano-structures, each one comprising the upper structure as well as lower one over the Amorphous silicon layer is formed.

Plasma treatment requires that the plasma’s pressure be at or below 5 kPa, and the power must be 1000 W or more. Furthermore, when it comes to plasma treatment, it’s preferable that the pressure be at least 20 kPa and the power should be at least 2000 W. In plasma treatment it is suggested that the substrate temperature not exceed 200 degrees. C. up to 300.degree. C. to 300.degree. It is preferred that the deposition process of Amorphous Silicon and the plasma treatment be performed successively without exposure to the air.

Plasma treatment with hydrogen is done on an amorphous silicon layer and the following procedures are carried out at the same time an reaction process to create microcrystalline silicon a top layer of silicon, and areaction process for etching the amorphous silicon layer, which is exposed, so that the nano-structure, which includes an upper structure that is in microcrystalline form and an lower structure in an amorphous state, on top of the silicon layer, is created. As a result, a silicon structure that has a three-dimensionally complex shape can be provided.

Furthermore, by using this method the silicon structure could be manufactured simply and easily with the use of the phenomenon where an ordered pattern forms in a natural way to create a nano-structure.

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