LOCKHEED MARTIN CORPORATION (Bethesda, MD)

A hybrid infrared focal plan array may be utilized to photograph objects in the infrared spectrum. It may comprise an FE and a BEND portion. Multiple electrically conductive bump bond may be used to couple the FE section to the BE. The FE portion may include nano-electronic circuits that are integrated with an array of imaging infrared pixels. CNT electronic circuits can be constructed to generate a multiplexed output signal. The BE part could include electronic circuits that are implemented on a substrate, and then designed to produce output signals that read out. A count of the multiple electrically conductive bump bond may be substantially less than the infrared image pixels of the array.

Modern infrared focal plane arrays (IRFPAs) can comprise an semiconductor (IR) absorbent substance as well as a readout-integrated circuit (ROIC). Physically, the absorbing material may be a wafer of an exotic semiconductor such as indiumantimonide (InSb) or mercury-cadmium-telluride (MCT), whereas the ROIC may be integrated with a silicon substrate. Due to the incompatibility between the silicon substrate and absorbing material the bump bonding procedure is commonly used for connecting the FPA to the ROIC. Bump bonding can involve In (In) bumps. Each bump has a diameter of around.about.15 millimeters. This restricts the size of the FPA’s feature. As an example, for mid-wave IR pixels, they are not optically restricted until well below 8 microns. However, a lot of IRFPA’s feature 15 micron pixels because 8 micron bumps might not produce as the desired results. In addition it is possible that an IRFPA could have at least one bump bond for each one pixel that allows each pixel of the absorbent material’s light current is collected within its ROIC. Because of these constraints the largest IRFPA currently could be limited to around 10 million pixels. As a result, there is a need for design concepts for small size arrays with high radiationperformance.

In certain aspects the apparatus for infrared imaging may include a hybrid infrared focal plane array that includes an front-end (FE) portion and an back-end (BE) portion. The FE portion may be coupled to the BE portion via multiple electricallyconductive bump bonds. Nano-electronic circuits could be integrated with an array infrared imaging pixel array to create the FE portion. Multiplexed output signals could be feasible with nano-electronic devices. The BE section can include electronic circuits built on a substrate that are specifically designed to generate readout signals. A count of the numerous electrically conductive bump bond may be considerably smaller than the infrared imaging pixels of the array.

In different ways there is a method to provide an infrared focal planar hybrid array could include the provision of an part of the FE that is composed of nano-electronic circuits coupled with an array of infrared imaging pixels and generating multiplexed output signals. ABE portion including electronic circuits constructed on a substrate and generating output signals that readout can be provided. The FE portion may be coupled to the BE portion by multiple electrically conductive bump bonds. The count of multipleelectrically conductive bump bond may be significantly lower than the count of infrared imaging pixels.

In various other ways the device used that uses infrared imaging could include an infrared focal plane array (IUM) coupled with nano-electronic circuits that form an F plane that is configured to generate multiplexed output signals that correspond to a variety of pixels. An CMOS electronic circuit back-end (BE) plane could be configured to receive the multiplexed output signals as well as to generate readout output signals. Multiple electrically conductive bump bonds can be used to connect the FE plane with the BEplane. The number of electrically conductive buffers may be proportional to the plurality.

In order to assist users to comprehend the specifics of the disclosure, this is a brief outline of the most important features. The claims will also describe additional benefits and characteristics of the disclosure.

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2. Utilize these terms to locate pertinent Cooperative Patent Classifications for your invention at the Classification Text Search Tool. To find the most appropriate classification for your invention, scan the resulting classification’s class Schemes (class schedules). Consider substituting the words you use for describing your invention, if you don’t get any results from your Classification Text Search with synonyms such as the terms you used in Step 1.

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